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Silicon Non-Volatile Memories; Paths of Innovation - De Salvo (2009) HC Textbook
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- Type
- Textbook
- Subject Area
- Engineering Management, Manufacturing Engineering
- Publication Name
- Silicon Non-Volatile Memories; Paths of Innovation
- Custom Bundle
- No
- Educational Level
- Adult & Further Education
- Personalized
- No
- Level
- Beginner, Intermediate, Business, Technical
- Publisher
- Wiley
- Subject
- Computer Science, Education, Engineering & Technology, Science
- ISBN
- 9781848211056
- EAN
- 9781848211056
關於產品
Product Identifiers
Publisher
Wiley & Sons, Incorporated, John
ISBN-10
1848211058
ISBN-13
9781848211056
eBay Product ID (ePID)
71761097
Product Key Features
Number of Pages
256 Pages
Language
English
Publication Name
Silicon Non-Volatile Memories : Paths of Innovation
Subject
Electronics / Semiconductors, Hardware / General, Electronics / Circuits / Integrated, General, Computer Engineering
Publication Year
2009
Type
Textbook
Subject Area
Computers, Technology & Engineering
Format
Hardcover
Dimensions
Item Height
0.8 in
Item Weight
18.4 Oz
Item Length
9.5 in
Item Width
6.5 in
Additional Product Features
Intended Audience
Scholarly & Professional
LCCN
2009-016200
Dewey Edition
22
Illustrated
Yes
Dewey Decimal
621.39732
Table Of Content
Preface vii Chapter 1. Introduction 1 Chapter 2. Semiconductor Industry Overview 7 2.1. The cyclical semiconductor market 7 2.2. The leading IC companies 12 2.3. The world IC market distribution 17 2.4. Semiconductor sales by IC devices 19 2.5. The semiconductor memory market 22 2.6. The impressive price decline of IC circuits 26 2.7. Moore's Law, the ITRS and their economic impacts 33 2.8. Exponential growth of manufacturing and R&D costs 46 2.9. The structural evolution of the semiconductor industry 56 2.10. Consolidation of the semiconductor memory sector 64 2.11. Conclusions 70 2.12. References 73 Chapter 3. Research on Advanced Charge Storage Memories 77 3.1. Key features of Flash technology 78 3.2. Flash technology scaling 87 3.3. Innovative paths in silicon NVM technologies 96 3.4. Research on advanced charge storage memories 97 3.4.1. Silicon nanocrystal memories 97 3.4.2. Silicon nanocrystal memories with high-k IPDs 112 3.4.3. Hybrid silicon nanocrystal/SiN memories with high-k IPDs 117 3.4.4. Silicon nanocrystal double layer memories with high-k IPDs 119 3.4.5. Metal nano-dots coupled with organic templates 121 3.4.6. High-k IPD-based memories 127 3.4.7. High-k/metal gate stacks for "TANOS" memories 136 3.4.8. FinFlash devices 139 3.4.9. Molecular charge-based memories 151 3.4.10. Effects of the few electron phenomena 159 3.5. Conclusions 163 3.6. References 164 Chapter 4. Future Paths of Innovation 171 4.1. 3D integration of charge-storage memories 172 4.2. Alternative technologies 185 4.2.1. Ferro RAMs 187 4.2.2. Magnetic RAMs 187 4.2.3. Phase-change RAMs 188 4.2.4. Conductive bridging RAMs 199 4.2.5. Oxide resistive RAMs 202 4.2.6. New crossbar architectures 206 4.3. Conclusion 215 4.4. References 216 Chapter 5. Conclusions 223 5.1. References 232 Index 233
Synopsis
This book provides a comprehensive overview of the different technological approaches currently being studied to fulfill future memory requirements. Two main research paths are identified and discussed. Different "evolutionary paths" based on new materials and new transistor structures are investigated to extend classical floating gate technology to the 32 nm node. "Disruptive paths" are also covered, addressing 22 nm and smaller IC generations. Finally, the main factors at the origin of these phenomena are identified and analyzed, providing pointers on future research activities and developments in this area., This book provides a comprehensive overview of the different technological approaches currently being studied to fulfill future memory requirements. Two main research paths are identified and discussed., Semiconductor flash memory is an indispensable component of modern electronic systems which has gained a strategic position in recent decades due to the progressive shift from computing to consumer (and particularly mobile) products as revenue drivers for Integrated Circuits (IC) companies. This book provides a comprehensive overview of the different technological approaches currently being studied to fulfill future memory requirements. Two main research paths are identified and discussed. Different "evolutionary paths" based on the use of new materials (such as silicon nanocrystals for storage nodes and high-k insulators for active dielectrics) and of new transistor structures (such as multi-gate devices) are investigated in order to extend classical floating gate technology to the 32 nm node. "Disruptive paths" based on new storage mechanisms or new technologies (such as phase-change devices, polymer or molecular cross-bar memories) are also covered in order to address 22 nm and smaller IC generations. Finally, the main factors at the origin of these phenomena are identified and analyzed, providing pointers on future research activities and developments in this area.
LC Classification Number
TK7895.M4D495 2009
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