第 1/1 張圖片
Physics of Semiconductor Devices by Yiming Li, Simon M. Sze and Kwok K. Ng...
狀況：
庫存 3 件
運費：
所在地：KL, 馬來西亞
送達日期：
估計於 6月18日, 二至 7月3日, 三之間送達 運送地點 43230
退貨：
保障：
請參閱物品說明或聯絡賣家以取得詳細資料。閱覽全部詳情查看保障詳情
（不符合「eBay 買家保障方案」資格）
賣家必須承擔此刊登物品的所有責任。
eBay 物品編號：305342219718
物品細節
- 物品狀況
- 很新: 狀況完好的書籍。封面發亮且沒有損壞，精裝本書籍含書皮。不存在缺頁或內頁受損，無褶皺或破損，同時也沒有對文字標注/標記，或在留白處書寫內容。內封面上標記極少。書籍的磨損和破損程度也很低。 查看所有物品狀況定義會在新視窗或分頁中開啟
- ISBN
- 9781119429111
- Subject Area
- Technology & Engineering
- Publication Name
- Physics of Semiconductor Devices
- Item Length
- 9.1 in
- Publisher
- Wiley & Sons, Incorporated, John
- Subject
- Engineering (General), Electronics / Semiconductors
- Publication Year
- 2021
- Type
- Textbook
- Format
- Hardcover
- Language
- English
- Item Height
- 1.6 in
- Item Width
- 6.1 in
- Item Weight
- 42.5 Oz
- Number of Pages
- 944 Pages
關於產品
Product Information
The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters. Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices: Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices Offers completely updated and revised information that reflects advances in device concepts, performance, and application Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual for Instructor's only Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.
Product Identifiers
Publisher
Wiley & Sons, Incorporated, John
ISBN-10
1119429110
ISBN-13
9781119429111
eBay Product ID (ePID)
239976943
Product Key Features
Publication Name
Physics of Semiconductor Devices
Format
Hardcover
Language
English
Subject
Engineering (General), Electronics / Semiconductors
Publication Year
2021
Type
Textbook
Subject Area
Technology & Engineering
Number of Pages
944 Pages
Dimensions
Item Length
9.1 in
Item Height
1.6 in
Item Width
6.1 in
Item Weight
42.5 Oz
Additional Product Features
Edition Number
4
LCCN
2020-028806
Intended Audience
Scholarly & Professional
Lc Classification Number
Tk7871.85.S988 2021
Table of Content
Preface ix Author Biography xi Introduction 1 Part I Semiconductor Physics Chapter 1 Physics and Properties of Semiconductors--A Review 7 1.1 Introduction, 7 1.2 Crystal Structure, 8 1.3 Energy Bands and Energy Gap, 11 1.4 Carrier Concentration at Thermal Equilibrium, 15 1.5 Carrier-Transport Phenomena, 26 1.6 Phonon, Optical, and Thermal Properties, 47 1.7 Heterojunctions and Nanostructures, 52 1.8 Basic Equations and Examples, 60 Part II Device Building Blocks Chapter 2 p-n Junctions 79 2.1 Introduction, 79 2.2 Depletion Region, 80 2.3 Current-Voltage Characteristics, 91 2.4 Junction Breakdown, 102 2.5 Transient Behavior and Noise, 115 2.6 Terminal Functions, 119 2.7 Heterojunctions, 126 Chapter 3 Metal-Semiconductor Contacts 136 3.1 Introduction, 136 3.2 Formation of Barrier, 137 3.3 Current Transport Processes, 155 3.4 Measurement of Barrier Height, 173 3.5 Device Structures, 183 3.6 Ohmic Contact, 190 Chapter 4 Metal-Insulator-Semiconductor Capacitors 200 4.1 Introduction, 200 4.2 Ideal MIS Capacitor, 201 4.3 Silicon MOS Capacitor, 214 4.4 Carrier Transport in MOS Capacitor, 241 Part III Transistors Chapter 5 Bipolar Transistors 263 5.1 Introduction, 263 5.2 Static Characteristics, 264 5.3 Compact Models of Bipolar Transistors, 283 5.4 Microwave Characteristics, 293 5.5 Related Device Structures, 306 5.6 Heterojunction Bipolar Transistor, 312 5.7 Self-Heating Effects, 318 Chapter 6 MOSFETs 329 6.1 Introduction, 329 6.2 Basic Device Characteristics, 334 6.3 Nonuniform Doping and Buried-Channel Device, 360 6.4 Device Scaling and Short-Channel Effects, 373 6.5 MOSFET Structures, 391 6.6 Circuit Applications, 403 6.7 NCFET and TFET, 408 6.8 Single-Electron Transistor, 414 Chapter 7 Nonvolatile Memory Devices 434 7.1 Introduction, 434 7.2 The Concept of Floating Gate, 435 7.3 Device Structures, 440 7.4 Compact Model of Floating-Gate Memory Cells, 447 7.5 Multi-Level Cells and 3-Dimensional Structures, 450 7.6 Applications and Scaling Challenges, 463 7.7 Alternative Structures, 467 Chapter 8 JFETs, MESFETs, and MODFETs 486 8.1 Introduction, 486 8.2 JFET and MESFET, 487 8.3 MODFET, 511 Part IV Negative-Resistance and Power Devices Chapter 9 Tunnel Devices 539 9.1 Introduction, 539 9.2 Tunnel Diode, 540 9.3 Related Tunnel Devices, 554 9.4 Resonant-Tunneling Diode, 571 Chapter 10 IMPATT Diodes, TED, and RST Devices 585 10.1 Introduction, 585 10.2 IMPATT Diodes, 586 10.3 Transferred-Electron Devices, 616 10.4 Real-Space-Transfer Devices, 636 Chapter 11 Thyristors and Power Devices 649 11.1 Introduction, 649 11.2 Thyristor Characteristics, 650 11.3 Thyristor Variations, 670 11.4 Other Power Devices, 676 Part V Photonic Devices and Sensors Chapter 12 LEDs and Lasers 697 12.1 Introduction, 697 12.2 Radiative Transitions, 698 12.3 Light-Emitting Diode (LED), 703 12.4 Laser Physics, 715 12.5 Laser Operating Characteristics, 723 12.6 Specialty Lasers, 742 Chapter 13 Photodetectors and Solar Cells 755 13.1 Introduction, 755 13.2 Photoconductor, 759 13.3 Photodiodes, 762 13.4 Avalanche Photodiode, 772 13.5 Phototransistor, 782 13.6 Charge-Coupled Device (CCD), 785 13.7 Metal-Semiconductor-Metal Photodetector, 799 13.8 Quantum-Well Infrared Photodetector (QWIP), 802 13.9 Solar Cell, 806 Chapter 14 Sensors 835 14.1 Introduction, 835 14.2 Thermal Sensors, 837 14.3 Mechanical Sensors, 843 14.4 Magnetic Sensors, 852 14.5 Chemical Sensors, 862 14.6 Biosensors, 867 Appendices 875 A. List of Symbols, 877 B. International System of Units, 887 C. Unit Prefixes, 888 D. Greek Alphabet, 889 E. Physical Constants, 890 F. Properties of Important Semiconductors, 891 G. The Bloch Theorem and the Periodic Energy in the Reciprocal Lattice, 892 H. Properties of Si and GaAs, 894 I. The Derivations of Boltzmann Transport Equation and Hydrodynamic Model, 895 J. Properties of SiO2 and Si3N4 , 901 K. Compact Models of Bipolar Transistors, 902 L. Discovery of the Floating-Gate Memory Effect, 910 Index 913
Copyright Date
2021
Dewey Decimal
621.38152
Dewey Edition
19
Illustrated
Yes
賣家提供的物品說明
賣家必須承擔此刊登物品的所有責任。
eBay 物品編號：305342219718
運費與處理費
物品所在地：
KL, 馬來西亞
運送地點
全球
排除：
郵政信箱, 以色列, 俄羅斯聯邦, 烏克蘭
| 運費與處理費 | 每加一件物品 | 運送地點 | 運送方式 | 運送*查看送達備註 |
|---|---|---|---|---|
| US $10.00（大約 HK$ 78.11） | US $10.00（大約 HK$ 78.11） | 美國 | Standard Shipping from outside US | 估計於 6月18日, 二至 7月3日, 三之間送達 運送地點 43230 |
| US $15.00（大約 HK$ 117.17） | US $15.00（大約 HK$ 117.17） | 美國 | 其他運送方式 (FedEx International Economy) | 估計於 6月11日, 二至 6月17日, 一之間送達 運送地點 43230 |
| 處理時間 |
|---|
| 通常會在收到所有款項後的 2 個工作日內發貨。 |
| 稅項 |
|---|
| 結賬時相關稅項可能適用。 進一步了解進一步了解為 eBay 購物繳稅。 |
物品編號 305342219718 的銷售稅
物品編號 305342219718 的銷售稅
賣家會對寄往以下各州的物品收取銷售稅：
| 州／省 | 銷售稅稅率 |
|---|
退貨政策
| 收到物品後聯絡賣家的期限： | 退款方式 |
|---|---|
| 30 日 | 退款 |
買家負責支付退貨運費。
賣家信用評價 （36）
e***e (25)- 買家留下的信用評價。
過去 1 個月
購買已獲認證
Delivered early and in great condition.
3***e (0)- 買家留下的信用評價。
過去 1 個月
購買已獲認證
Brand new came quick no complaints
m***f (34)- 買家留下的信用評價。
過去 6 個月
購買已獲認證
The book came in like new condition, exactly as described. I was happy with my purchase and would buy from this seller again!