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Frontiers in Nanoscale Science of Micron/Submicr
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- PublishedOn
- 2012-07-31
- Title
- Frontiers in Nanoscale Science of Micron/Submicron Devices
- ISBN
- 9789401072946
- Publication Year
- 2011
- Series
- NATO Science Series E: Ser.
- Type
- Textbook
- Format
- Trade Paperback
- Language
- English
- Publication Name
- Frontiers in Nanoscale Science of Micron/Submicron Devices
- Item Length
- 9.4in
- Publisher
- Springer Netherlands
- Item Width
- 6.3in
- Item Weight
- 32 Oz
- Number of Pages
- Xvi, 554 Pages
關於產品
Product Information
Nanoscale Science, whose birth and further growth and development has been driven by the needs of the microelectronics industry on one hand, and by the sheer human curiosity on the other hand, has given researchers an unprecedented capability to design and construct devices whose function ality is based on quantum and mesoscopic effects. A necessary step in this process has been the development of reliable fabrication techniques in the nanometer scale: two-dimensional systems, quantum wires and dots, and Coulomb blockade structures with almost ideal properties can nowadays be fabricated, and subjected to experimental studies. How does one fabricate micro/nanostructures of low dimensionality? How does one perform a nanoscale characterization of these structures? What are the fundamental properties typical to the structures? Which new physical processes in nanostructures need to be understood? What new physical processes may allow us to create new nanostructures? An improved understanding of these topics is necessary for creation of new concepts for future electronic and optoelectronic devices and for characterizing device structures based on those concepts.
Product Identifiers
Publisher
Springer Netherlands
ISBN-10
9401072949
ISBN-13
9789401072946
eBay Product ID (ePID)
143812599
Product Key Features
Publication Name
Frontiers in Nanoscale Science of Micron/Submicron Devices
Format
Trade Paperback
Language
English
Publication Year
2011
Series
NATO Science Series E: Ser.
Type
Textbook
Number of Pages
Xvi, 554 Pages
Dimensions
Item Length
9.4in
Item Width
6.3in
Item Weight
32 Oz
Additional Product Features
Series Volume Number
328
Number of Volumes
1 Vol.
Lc Classification Number
Qc374-379
Table of Content
I. Nanotechnologies.- Submicron Technology.- Ultra Fine Particles and Coatings.- 3-D Patterned III-V Semicondutor Devices Using High Energy In-Situ Focused Ion Beam Lithography and MBE.- Real Time 3-D Patterned Crystal Growth of GaAs Using a Low Energy Focused Ion Beam and Molecular Beam Epitaxy.- Mesoscopic Structure-Formation and Quantum Properties of Heteroepitaxy of InAs/GaAs.- Van der Waals Epitaxy of Transition Metal Dichalcogenides Using Metal Organic Precursors (MOVDWE).- Thin Film Epitaxial Growth by Laser Ablation.- Nanostructuring of Silicon by Laser Direct Writing.- Si(001) Surface Passivation caused by Bi Adsorption.- II. Characterization.- Applications of Scanning Force Microscopy.- An Elliptically Polarized Synchrotron Radiation Beam Line and Its Applications.- The Potential of Electron Spectroscopy and Scanning Tunnelling Microscopy for the Study of Semiconducting Nanostructures.- Optical Characterization of Surfaces at IR and VIS Energies.- Optical Techniques for Probing Semiconductor Surfaces and Interfaces.- Nanoscale Characterization of Interfaces in Micron/Submicron Structures.- III. Fundamental Properties of Micro/Nanostructures.- Electron Interference at III-V Heterointerfaces: Physics and Devices.- Non-Equilibrium Mesoscopic Physics: Microwave-Induced Coherent Transport in Two-Dimensional Semiconductor Microstructures.- Influence of Fluctuations of Widths of Single Quantum Wells on Photoluminescence Properties in Metallo-Organic Compounds of Hydride Epitaxial GaAs / ALxGa1-xAs Heterostructures.- Accurate Modeling of Double Barrier Resonant Tunneling Diodes.- Mechanisms of the Tunnel Current Formation in Double Barrier Resonant Tunneling Structures.- Quantum Well Structures Based on the Layered Compounds InSe and GaSe Grown by Van der Waals Epitaxy.- Frequency Properties of Planer Microwave Detector.- Noise in Silicon Structures with Bicrystallites.- Fundamental Properties and Nanoscale Aspects of Schottky Barriers.- Size Effects in Properties of Metal-Semiconductor Structures with Schottky Barriers.- New Terminations for Planar Schottky Structure (PSS).- Metal (Cr, Mo, W)-GaAs Contacts.- Dislocation Displacement in Silicon Structures.- Effect of Substrate Defects in the Luminescent Properties of Porous Silicon Layers.- On the Kinematics of Amorphization under Ion Implantation.- IV. Basic Physics of Novel Nanostructures.- Lateral Superlattices: Classical, Semi-Classical, and Quantum Mechanical Transport Phenomena.- Transport Studies in Semiconductor Heterostructures.- Equilibrium and Nonequilibrium Optical Effects in Semiconductor Heterostructures.- Observation of Scaling Behavior in a Coulomb Blockade System.- Dynamic Quantum Wells and Quantum Dots in MIS-Microstructure with Periodic Field Electrodes.- Disordered Superlattices.- Si/Ge Superlattices: A Step Towards Si-Based Optoelectronics.- Low Frequency Admittance of Quantized Hall Conductors.- Screening in Two-Dimensional Electron Liquid.- Dielectric Function of Matrix Disperse Systems with Nanoscale Conducting Inclusions Exhibiting Quantum Size Properties.- Photograph.- List of Participants.
Copyright Date
1996
Topic
Nanoscience, Physics / Condensed Matter, Electronics / Semiconductors, Chemistry / Physical & Theoretical, Materials Science / Electronic Materials
Intended Audience
Scholarly & Professional
Illustrated
Yes
Genre
Technology & Engineering, Science
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