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Technology CAD ― Computer Simulation of IC Processes and Devices (The Springer

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Book Title
Technology CAD ― Computer Simulation of IC Processes and Devices
ISBN
9780792393795
EAN
9780792393795
Subject Area
Computers, Technology & Engineering
Publication Name
Technology Cad : Computer Simulation of Ic Processes and Devices
Publisher
Springer
Item Length
9.3 in
Subject
Cad-Cam, Electronics / Circuits / Vlsi & Ulsi, Electronics / Circuits / General, Electrical
Publication Year
1993
Series
The Springer International Series in Engineering and Computer Science Ser.
Type
Textbook
Format
Hardcover
Language
English
Author
Zhiping Yu, Robert W. Dutton
Item Weight
56.8 Oz
Item Width
6.1 in
Number of Pages
Xvii, 373 Pages

關於產品

Product Information

129 3.6 Exercises 130 3.7 References. 131 4 PN Junctions 131 4.1 Introduction. 132 4.2 Carrier Densities: Equilibrium Case 4.3 Non-Equilibrium .......... . 139 4.4 Carrier Transport and Conservation 144 4.5 The pn Junction - Equilibrium Conditions. 147 155 4.6 The pn Junction - Non-equilibrium. 4.7 SEDAN Analysis . . . . . . . . . . . . . 166 4.7.1 Heavy Doping Effects ..... . 176 4.7.2 Analysis of High-Level Injection 181 190 4.7.3 Technology-Dependent Device Effects 4.8 Summary 193 4.9 Exercises 193 194 4.10 References. 5 MOS Structures 197 5.1 Introduction ............. . 197 5.2 The MOS Capacitor ........ . 198 5.3 Basic MOSFET I-V Characteristics. 208 5.4 Threshold Voltage in Nonuniform Substrate 217 5.5 MOS Device Design by Simulation . . . . . 224 5.5.1 Body-bias Sensitivity of Threshold Voltage 225 5.5.2 Two-region Model . . . . . . . . 231 5.5.3 MOSFET Design by Simulation. 234 5.6 Summary 240 5.7 Exercises 240 5.8 References. 242 6 Bipolar Transistors 243 6.1 Introduction ... 243 6.2 Lateral pnp Transistor Operation 245 6.3 Transport Current Analysis ... 252 6.4 Generalized Charge Storage Model 260 6.,1) Transistor Equivalent Circuits. 267 6.5.1 Charge Control Model ...

Product Identifiers

Publisher
Springer
ISBN-10
0792393791
ISBN-13
9780792393795
eBay Product ID (ePID)
1089388

Product Key Features

Number of Pages
Xvii, 373 Pages
Language
English
Publication Name
Technology Cad : Computer Simulation of Ic Processes and Devices
Publication Year
1993
Subject
Cad-Cam, Electronics / Circuits / Vlsi & Ulsi, Electronics / Circuits / General, Electrical
Type
Textbook
Subject Area
Computers, Technology & Engineering
Author
Zhiping Yu, Robert W. Dutton
Series
The Springer International Series in Engineering and Computer Science Ser.
Format
Hardcover

Dimensions

Item Weight
56.8 Oz
Item Length
9.3 in
Item Width
6.1 in

Additional Product Features

Intended Audience
Scholarly & Professional
LCCN
93-020663
Series Volume Number
243
Number of Volumes
1 Vol.
Illustrated
Yes
Lc Classification Number
Tk7867-7867.5
Table of Content
1 Technology-Oriented CAD.- 1.1 Introduction.- 1.2 Process and Device CAD.- 1.3 Process Simulation Techniques.- 1.4 Interfaces in Process and Device CAD.- 1.5 CMOS Technology.- 1.6 Summary.- 1.7 Exercises.- 1.8 References.- 2 Introduction to SUPREM.- 2.1 Introduction.- 2.2 Ion Implantation.- 2.3 Oxidation.- 2.4 Impurity Diffusion.- 2.5 Summary.- 2.6 Exercises.- 2.7 References.- 3 Device CAD.- 3.1 Introduction.- 3.2 Semiconductor Device Analysis.- 3.3 Field-Effect Structures.- 3.4 Bipolar Junction Structures.- 3.5 Summary.- 3.6 Exercises.- 3.7 References.- 4 PN Junctions.- 4.1 Introduction.- 4.2 Carrier Densities: Equilibrium Case.- 4.3 Non-Equilibrium.- 4.4 Carrier Transport and Conservation.- 4.5 The pn Junction -- Equilibrium Conditions.- 4.6 The pn Junction -- Non-equilibrium.- 4.7 SEDAN Analysis.- 4.8 Summary.- 4.9 Exercises.- 4.10 References.- 5 MOS Structures.- 5.1 Introduction.- 5.2 The MOS Capacitor.- 5.3 Basic MOSFET I-V Characteristics.- 5.4 Threshold Voltage in Nonuniform Substrate.- 5.5 MOS Device Design by Simulation.- 5.6 Summary.- 5.7 Exer cises.- 5.8 References.- 6 Bipolar Transistors.- 6.1 Introduction.- 6.2 Lateral pnp Transistor Operation.- 6.3 Transport Current Analysis.- 6.4 Generalized Charge Storage Model.- 6.5 Transistor Equivalent Circuits.- 6.6 Second Order Effects.- 6.7 Transit Time and Cutoff Frequency.- 6.8 Application of Simulation Tools.- 6.9 Summary.- 6.10 Exercises.- 6.11 References.- 7 BiCMOS Technology.- 7.1 Introduction.- 7.2 Triple-Diffused BiCMOS.- 7.3 Buried-Epitaxial Layer BiCMOS.- 7.4 Summary.- 7.5 Exercises.- 7.6 References.- A Numerical Analyis.- B BiCMOS Technology Overview.- C Templates for PISCES Simulation.
Copyright Date
1993

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